EFFECTS OF FIELD-INDUCED HOLE-DENSITY MODULATION ON NORMAL-STATE AND SUPERCONDUCTING TRANSPORT IN YBA2CU3O7-X

被引：152

作者：

XI, XX ^{[1
]}

DOUGHTY, C ^{[1
]}

WALKENHORST, A ^{[1
]}

KWON, C ^{[1
]}

LI, Q ^{[1
]}

VENKATESAN, T ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.68.1240

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The hole-density dependence of the normal-state resistivity and transition temperature T(c) of YBa2Cu3O7-x was studied using the electric field effect in ultrathin films of 1 to 8 unit cells thickness. The change in resistivity was found to bc equal to the field-induced variation in the areal carrier density, leading to a relation that the conductivity is proportional to the hole density. A similar linear dependence was also found in T(c). However, a saturation occurred in both cases but at different hole densities. The result reveals different effects of hole filling in influencing normal-state and superconducting transport of YBa2Cu3O7-x.

引用

页码：1240 / 1243

页数：4

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