RAMAN-SCATTERING IN ION-IMPLANTED SILICON EXPOSED TO RF-PLASMA TREATMENT

被引：1

作者：

ARTAMONOV, VV

VALAKH, MY

LYSENKO, VS

NAZAROV, AN

STRELTCHUK, VV

机构：

[1] Institute of Semiconductors, Ukraintan Academy of Sciences, Kiev-28, SU-252650

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 05期

关键词：

61.70.T; 78.30.Gt;

D O I：

10.1007/BF00348386

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural changes in implantation-amorphized silicon layers under radio-frequency (rf) discharge treatment, are studied by the Raman technique. The results are compared with those of thermally annealed samples. The rf treatment is shown to result in amorphous phase relaxation in silicon, while the thermal annealing converts a-Si into c-Si. The a-Si relaxation model under rf-plasma treatment is discussed. © 1990 Springer-Verlag.

引用

页码：434 / 436

页数：3

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