RAMAN-SCATTERING IN ION-IMPLANTED SILICON EXPOSED TO RF-PLASMA TREATMENT

被引：1
|
作者：
ARTAMONOV, VV
VALAKH, MY
LYSENKO, VS
NAZAROV, AN
STRELTCHUK, VV
机构：
[1] Institute of Semiconductors, Ukraintan Academy of Sciences, Kiev-28, SU-252650
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 05期
关键词：
61.70.T; 78.30.Gt;
D O I：
10.1007/BF00348386
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural changes in implantation-amorphized silicon layers under radio-frequency (rf) discharge treatment, are studied by the Raman technique. The results are compared with those of thermally annealed samples. The rf treatment is shown to result in amorphous phase relaxation in silicon, while the thermal annealing converts a-Si into c-Si. The a-Si relaxation model under rf-plasma treatment is discussed. © 1990 Springer-Verlag.
引用
收藏
页码：434 / 436
页数：3
相关论文
共 50 条
  • [1] RAMAN-SCATTERING FROM ION-IMPLANTED SILICON
    JAIN, KP
    SHUKLA, AK
    ASHOKAN, R
    ABBI, SC
    BALKANSKI, M
    PHYSICAL REVIEW B, 1985, 32 (10): : 6688 - 6691
  • [2] RAMAN-SCATTERING FROM ION-IMPLANTED GRAPHITE
    ELMAN, BS
    DRESSELHAUS, MS
    DRESSELHAUS, G
    MABY, EW
    MAZUREK, H
    PHYSICAL REVIEW B, 1981, 24 (02) : 1027 - 1034
  • [3] RAMAN-SCATTERING IN VARIOUS PHASES OF ION-IMPLANTED, LASER-ANNEALED SILICON
    AVAKYANTS, LP
    GORELIK, VS
    OBRAZTSOVA, ED
    FIZIKA TVERDOGO TELA, 1990, 32 (05): : 1507 - 1510
  • [4] MELTING MODEL AND RAMAN-SCATTERING DURING PULSED LASER ANNEALING OF ION-IMPLANTED SILICON
    WOOD, RF
    LOWNDES, DH
    JELLISON, GE
    MODINE, FA
    APPLIED PHYSICS LETTERS, 1982, 41 (03) : 287 - 290
  • [5] RAMAN-SCATTERING STUDY OF ION-IMPLANTED AND CW-LASER ANNEALED POLYCRYSTALLINE SILICON
    NAKASHIMA, S
    OIMA, S
    MITSUISHI, A
    NISHIMURA, T
    FUKUMOTO, T
    AKASAKA, Y
    SOLID STATE COMMUNICATIONS, 1981, 40 (07) : 765 - 768
  • [6] RAMAN-SCATTERING DEPTH PROFILE OF THE STRUCTURE OF ION-IMPLANTED GAAS
    HOLTZ, M
    ZALLEN, R
    BRAFMAN, O
    MATTESON, S
    PHYSICAL REVIEW B, 1988, 37 (09): : 4609 - 4617
  • [7] RAMAN-SCATTERING FROM ION-IMPLANTED DIAMOND, GRAPHITE, AND POLYMERS
    LEE, EH
    HEMBREE, DM
    RAO, GR
    MANSUR, LK
    PHYSICAL REVIEW B, 1993, 48 (21) : 15540 - 15551
  • [8] RAMAN-SCATTERING FROM H+ AND D+ ION-IMPLANTED SILICON-CARBIDE
    RAHN, LA
    COLWELL, PJ
    CHOYKE, WJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 378 - 378
  • [9] RAMAN-SCATTERING FROM ION-IMPLANTED CARRIERS IN N-GAAS
    NICHOLAS, RJ
    STOLZ, HJ
    SOLID-STATE ELECTRONICS, 1982, 25 (01) : 55 - 58
  • [10] RAMAN-SCATTERING STUDY OF THE RECOVERY PROCESS IN GA ION-IMPLANTED GASB
    KIM, SG
    ASAHI, H
    SETA, M
    TAKIZAWA, J
    EMURA, S
    SONI, RK
    GONDA, S
    TANOUE, H
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 579 - 585
12345