SOLID-STATE EPITAXIAL-GROWTH OF DEPOSITED SI FILMS

被引：56

|

作者：

VONALLMEN, M ^{[1
]}

LAU, SS ^{[1
]}

MAYER, JW ^{[1
]}

TSENG, WF ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：280 / 282

页数：3

相关论文

共 50 条

[1] SOLID-STATE EPITAXIAL-GROWTH OF DEPOSITED SI FILMS
VONALLMEN, M
LAU, SS
MAYER, JW
TSENG, WF
SHENG, TT
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C345 - C345
[2] SOLID-STATE REACTIONS FOR THE EPITAXIAL-GROWTH OF SPINEL FILMS
HESSE, D
BETHGE, H
JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 69 - 76
[3] EPITAXIAL-GROWTH BY SOLID-STATE DIFFUSION
GABOR, T
DIERSSEN, GH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 430 - 433
[4] EPITAXIAL-GROWTH OF SI LAYERS FROM SI DEPOSITED ON PD FILMS ON SI
CANALI, C
CAMPISANO, SU
LAU, SS
LIAU, ZL
MAYER, JW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C78 - C78
[5] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI
HUNG, LS
LAU, SS
VONALLMEN, M
MAYER, JW
ULLRICH, BM
BAKER, JE
WILLIAMS, P
TSENG, WF
APPLIED PHYSICS LETTERS, 1980, 37 (10) : 909 - 911
[6] PLANARIZED SOLID-STATE EPITAXIAL-GROWTH OF SI AND ITS EFFECT ON SCHOTTKY-BARRIER DIODES
REITH, TM
SULLIVAN, MJ
APPLIED PHYSICS LETTERS, 1978, 32 (03) : 177 - 179
[7] EPITAXIAL-GROWTH OF DEPOSITED FILMS BY LASER-HEATING
ROTH, JA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C363 - C363
[8] EPITAXIAL-GROWTH OF COSI2 FILMS ON SI
SAITOH, S
ISHIWARA, H
FURUKAWA, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C95 - C95
[9] SOLID-PHASE EPITAXIAL-GROWTH OF GE AND SI THROUGH METAL-FILMS
LAU, SS
MAYER, JW
NICOLET, MA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C78 - C78
[10] SOLID-PHASE EPITAXIAL-GROWTH OF GAAS ON SI SUBSTRATES
CHO, KI
CHOO, WK
PARK, SC
NISHINAGA, T
LEE, BT
APPLIED PHYSICS LETTERS, 1990, 56 (05) : 448 - 450

← 1 2 3 4 5 →