MANY-ELECTRON TREATMENT FOR CHALCOGEN COMPLEXES IN SILICON

被引：0
作者：
FAZZIO, A
ANTONELLI, A
DEPAULA, HF
CANUTO, S
机构：
[1] Instituto de Fisica, Universidade de São Paulo, 01498 São Paulo, SP
[2] Departamento de Fisica, Universidade Federal de Pernambuco, 50000, Recife, PE
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 03期
关键词：
D O I：
10.1088/0268-1242/5/3/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors present results of electronic structure calculations for complex defect centres-chalcogen impurity pairs-in silicon: O2, S2 and SO, in different geometrical configurations. Treatment of many-electron interactions is included through configuration-interaction, and is shown to be relevant to the correct prediction of ground-state properties. They also report their results for excited states and hyperfine terms.
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页码：196 / 199
页数：4
相关论文
共 15 条
[1]  
(1986)
[2]  
Baraff GA, (1984)
[3]  
Zunger A, Solid State Phys., 39, (1986)
[4]  
Baraff GA, Schluter M, Phys. Rev. Lett., 41, 13, (1978)
[5]  
Bernholc J, Lipari N, Pantelides ST, Phys. Rev. Lett., 41, (1978)
[6]  
Weinert CM, Scheffler M, Phys. Rev. Lett., 58, 14, (1987)
[7]  
Kohn W, Sham LJ, Phys. Rev., 140, (1965)
[8]  
Hohenberg P, Kohn W, Phys. Rev., 136, (1964)
[9]  
Zerner MC, Loew GH, Kirchner R, Mueller-Westerhoff UT, J. Am. Chem. Soc., 102, 2, (1980)
[10]  
Shavitt I, (1977)
12