FORMATION OF THIN SI3N4 FILMS BY NITROGEN ION-IMPLANTATION INTO SILICON

被引：49

作者：

YADAV, AD

JOSHI, MC

机构：

[1] Department of Physics, University of Bombay, Bombay

来源：

THIN SOLID FILMS | 1979年 / 59卷 / 03期

关键词：

D O I：

10.1016/0040-6090(79)90440-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Infrared transmission studies of Si3N4 layers formed by high dose 14N2+ ion implantation into silicon at 30 keV for ion doses ranging from 1 × 1016 to 2 × 1018 ions cm-2 and the spectral changes after annealing are reported. It was found that a stoichiometric Si3N4 layer can be formed at a dose level of about 1 × 1018 ions cm-2. These films, after annealing at 900°C, were found to be comparable in their IR and passivation properties with those formed by other conventional techniques. © 1979.

引用

页码：313 / 317

页数：5

共 9 条

[1] BLAMIRES NG, 1967 P INT C APPL IO, P669
[2] BORDERS JA, 1971, ION IMPLANTATION SEM, P241
[3] DEARNALEY G., 1973, ION IMPLANTATION
[4] FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES
DYLEWSKI, J
JOSHI, MC
[J]. THIN SOLID FILMS, 1976, 35 (03) : 327 - 336
[5] FREEMAN JH, 1970, 1970 EUR C ION IMPL, P74
[6] HU SM, 1966, J ELECTROCHEM SOC, V113, P695
[7] NYQUIST RA, 1973, INFRARED SPECTRA INO
[8] PLISKIN WA, 1969, PROG ANALYTICAL CHEM, V2, P168
[9] WILSON RG, 1973, ION BEAMS APPLICATIO

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