QUANTUM CAPACITANCE DEVICES

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[2] CONDUCTION MECHANISMS IN BANDTAILS AT SI-SIO2 INTERFACE [J]. SURFACE SCIENCE, 1976, 58 (01) : 60 - 70

[3] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[4] THEORY OF CARRIER-DENSITY FLUCTUATIONS IN AN IGFET NEAR THRESHOLD [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2181 - 2192

[5] KASTALSKY A, UNPUB

[6] LURY S, 1987, HETEROJUNCTION BAND, pCH12

[7] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1347 - 1349

[8] LURYI S, 1986, APPL PHYS LETT, V48, P1693, DOI 10.1063/1.97043

[9] LURYI S, 1985, DEC TECH DIG IEEE IN, P666

[10] LURYI S, 1987, SILICON MOL BEAM EPI, V1, pCH8

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[2] CONDUCTION MECHANISMS IN BANDTAILS AT SI-SIO2 INTERFACE [J]. SURFACE SCIENCE, 1976, 58 (01) : 60 - 70

[3] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[4] THEORY OF CARRIER-DENSITY FLUCTUATIONS IN AN IGFET NEAR THRESHOLD [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2181 - 2192

[5] KASTALSKY A, UNPUB

[6] LURY S, 1987, HETEROJUNCTION BAND, pCH12

[7] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1347 - 1349

[8] LURYI S, 1986, APPL PHYS LETT, V48, P1693, DOI 10.1063/1.97043

[9] LURYI S, 1985, DEC TECH DIG IEEE IN, P666

[10] LURYI S, 1987, SILICON MOL BEAM EPI, V1, pCH8