DEPTH PROFILE OF VACANCY-TYPE DEFECTS IN B+-IMPLANTED SI WITH A SIO2 OVERLAYER BY A VARIABLE-ENERGY POSITRON BEAM

被引：14
|
作者：
UEDONO, A [1 ]
TANIGAWA, S [1 ]
SUGIURA, J [1 ]
OGASAWARA, M [1 ]
机构：
[1] HITACHI LTD,CTR DEVICE DEV,OME,TOKYO 198,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 01期
关键词：
D O I：
10.1063/1.100569
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：25 / 27
页数：3
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