ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL

被引：35

作者：

NISHI, H

SAKURAI, T

FURUYA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期

关键词：

D O I：

10.1149/1.2131473

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：461 / 466

页数：6

共 14 条

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[8] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J].

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