ON THE CHANNEL CAPACITY OF READ/WRITE ISOLATED MEMORY

被引：15

作者：

COHN, M

机构：

[1] Computer Science Department, Brandeis University, Waltham

来源：

DISCRETE APPLIED MATHEMATICS | 1995年 / 56卷 / 01期

关键词：

D O I：

10.1016/0166-218X(93)E0130-Q

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

We apply graph theory to find upper and lower bounds on the channel capacity of a serial, binary, rewritable medium in which consecutive locations may not store 1's, and consecutive locations may not be altered during a single rewriting pass. If the true capacity is close to the upper bound, then a trivial code is nearly optimal.

引用

页码：1 / 8

页数：8

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