ALGAAS/GE/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：0

作者：

WANG, Y ^{[1
]}

BARUCH, N ^{[1
]}

WANG, WI ^{[1
]}

CHENEY, ME ^{[1
]}

HUANG, CI ^{[1
]}

SCHERER, RL ^{[1
]}

机构：

[1] WRIGHT LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the comparison studies of molecular beam epitaxial growth of AlGaAs/Ge/GaAs heterostructures on differently oriented GaAs substrates. We have investigated the molecular beam epitaxial growth of Ge on GaAs, and GaAs and AlGaAs on Ge epitaxial layers with the aim of obtaining device-quality interfaces of AlGaAs and GaAs epilayers on Ge which are free of antiphase domains. Our results show that the junctions grown on (311)B oriented substrates have better electrical characteristics than those grown on (100) oriented substrates. This is due to the absence of antiphase domains and less interface charge in heterostructures grown on (311)B substrates.

引用

页码：1300 / 1302

页数：3

共 12 条

[1] INTERFACE MORPHOLOGY OF EPITAXIAL-GROWTH OF GE ON GAAS AND GAAS ON GE BY MOLECULAR-BEAM EPITAXY [J].