ANALYTICAL BASE TRANSIT-TIME MODEL FOR HIGH-INJECTION REGIONS

被引：17
作者：
SUZUKI, K
机构：
[1] Fujitsu Laboratories Ltd, Atsugi, 243-01
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 03期
关键词：
D O I：
10.1016/0038-1101(94)90016-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a perturbation theory focused on injected electron concentrations, we derived analytical models for collector current density, J(n), and base transit time, tau(B), for arbitrarily doped bases. These models are valid in all injection regions before the onset of the Kirk effect, include existing models as special cases, and agree well with numerical results. Our model predicts that tau(B) for the Gaussian-doped base is still smaller than that of a base with a uniform profile, a box-doped base, even in high-injection regions.
引用
收藏
页码：487 / 493
页数：7
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