INTERSUBBAND STIMULATED-EMISSION AND OPTICAL GAIN BY PHONON PUMPING IN QUANTUM WIRES

被引:6
作者
LEBURTON, JP
机构
[1] Beckman Institute for Advanced Science and Technology, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana
关键词
D O I
10.1063/1.354900
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an analysis of the optical gain for stimulated emission between subbands in quasione-dimensional structures. The population inversion is induced by a new pumping mechanism involving phonon absorption during transport in quantum wires. The population inversion threshold for far infrared stimulated emission is calculated in a generic GaAs quantum wires laser structure and shows a quite reasonable minimum value of DELTAn = 3 X 10(5)/cm at lambda = 100 mum. For longer wavelengths, free carrier absorption is the main limitation to stimulated emission.
引用
收藏
页码:1417 / 1420
页数:4
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