EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES

被引：18

作者：

DRUMMOND, TJ ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

HESS, K ^{[1
]}

CHO, AY ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5689 / 5690

页数：2

共 11 条

[1]

DINGLE R, 1978, APPL PHYS LETT, V33, P65

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[6] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

MORKOC, H ;

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[7]

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[8]

PRICE PJ, UNPUBLISHED

[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

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[10] HIGH MOBILITY GAAS-ALXGA1-XAS SINGLE PERIOD MODULATION-DOPED HETEROJUNCTIONS [J].

WITKOWSKI, LC ;

DRUMMOND, TJ ;

BARNETT, SA ;

MORKOC, H ;

CHO, AY ;

GREENE, JE .

ELECTRONICS LETTERS, 1981, 17 (03) :126-128

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