Growth and Characterization of CuO-doped SnO2 Thin Films Prepared by Sequential Electron Beam Evaporation Method for Application as Hydrogen Sulfide Gas Sensor

被引:0
|
作者
Kumar, Rajesh [1 ]
机构
[1] Lovely Profess Univ, Dept Phys, Phagwara 144411, Punjab, India
来源
RESEARCH JOURNAL OF PHARMACEUTICAL BIOLOGICAL AND CHEMICAL SCIENCES | 2015年 / 6卷 / 03期
关键词
H2S; CuO; Sensitivity;
D O I
暂无
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
This paper deals with the preparation and characterization of CuO-SnO2 thin films prepared by sequential electron beam evaporation technique. The results obtained were outstanding in terms of sensitivity of these films towards detection of hydrogen sulfide gas, proving that CuO is a good promoter of hydrogen gas sensitivity of SnO2. The resistance of the thin films showed a decreasing trend indicating rupture of pn junctions while the I-V characteristics of these films were linear in nature showing that the contacts are ohmic. The best sensitivity values were obtained for film temperature of 160 degrees C. These films hold promise for use in industrial sector where the hydrogen sulfide gas is widely used.
引用
收藏
页码:471 / 475
页数:5
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