ZERO BIAS ANOMALIES PRODUCED BY CONTROLLED AMOUNTS OF CR IN A1-I-A1 TUNNEL JUNCTIONS

被引：17

作者：

NIELSEN, P

机构：

[1] The James Franck Institute, Department of Physics, The University of Chicago, Chicago

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 19期

关键词：

D O I：

10.1016/0038-1098(69)90317-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zero to 5Å of Cr have been deposited in the barriers of Al-I-Al tunnel junctions. One angstrom of Cr metal produces a 10 per cent conductance peak which does not have the voltage-temperature dependence of the Appelbaum theory and is absent when the metal is oxidized. Thicker layers of oxidized Cr produce a large conductance dip. © 1969.

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页码：1429 / &

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