LIGHT-INDUCED LIGHT-ABSORPTION CHANGES IN ASSE AND GESE2 THIN-FILMS

被引：18

作者：

TOTH, L ^{[1
]}

HAJTO, J ^{[1
]}

ZENTAI, G ^{[1
]}

机构：

[1] CENT RES INST PHYS,H-1525 BUDAPEST,HUNGARY

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 23卷 / 03期

关键词：

D O I：

10.1016/0038-1098(77)90105-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：185 / 188

页数：4

共 10 条

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[3] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

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[4] STATES IN GAP IN GLASSY SEMICONDUCTORS [J].

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MOTT, NF .

PHYSICAL REVIEW LETTERS, 1975, 35 (19) :1293-1296

[5] LUMINESCENCE IN AMORPHOUS-SEMICONDUCTORS [J].

STREET, RA .

ADVANCES IN PHYSICS, 1976, 25 (04) :397-453

[6] REVERSIBLE PHOTOINDUCED CHANGE IN INTERMOLECULAR DISTANCE IN AMORPHOUS AS2S3 NETWORK [J].

TANAKA, K .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :243-245

[7]

TANAKA K, 1974, 5TH P INT C, P339

[8]

VASSILYEV VA, 1977, SOLID STATE COMMUN, V22, P663

[9]

VASSILYEV VA, 1977, 1977 P INT C AM SEM, P171

[10]

VASSILYEV VA, 1977, 1976 P INT C AM SEM, P189

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