The role of H in the growth mechanism of PECVD a-Si : H

被引：0

作者：

van de Sanden, MCM ^{[1
]}

Kessels, WMM ^{[1
]}

Smets, AHM ^{[1
]}

Korevaar, BA ^{[1
]}

Severens, RJ ^{[1
]}

Schram, DC ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes an extension of the silyl radical based kinetic growth model by atomic hydrogen induced surface hydrogen abstraction processes. It is shown that by including this direct abstraction process several problems of the SiH3 based model are resolved. The defect density can be predicted with the proper temperature dependence and order of magnitude. The implications for high rate deposition of a-Si:H are discussed.

引用

页码：13 / 18

页数：6

共 19 条

[1] PLASMA CHEMISTRY IN DISILANE DISCHARGES
DOYLE, JR
DOUGHTY, DA
GALLAGHER, A
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) : 4771 - 4780
[2] DEFECT FORMATION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON
GANGULY, G
MATSUDA, A
[J]. PHYSICAL REVIEW B, 1993, 47 (07) : 3661 - 3670
[3] SURFACE-REACTIONS DURING THE A-SI-H GROWTH IN THE DIODE AND TRIODE GLOW-DISCHARGE REACTORS
GUIZOT, JL
NOMOTO, K
MATSUDA, A
[J]. SURFACE SCIENCE, 1991, 244 (1-2) : 22 - 38
[4] Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H
Kessels, WMM
Severens, RJ
van de Sanden, MCV
Schram, DC
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 133 - 137
[5] Hydrogen in a-Si:H deposited by an expanding thermal plasma:: A temperature, growth rate and isotope study
Kessels, WMM
Van de Sanden, MCM
Severens, RJ
Van Ijzendoorn, LJ
Schram, DC
[J]. AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 529 - 534
[6] ATOMIC H-ABSTRACTION OF SURFACE-H ON SI - AN ELEY-RIDEAL MECHANISM
KOLESKE, DD
GATES, SM
JACKSON, B
[J]. JOURNAL OF CHEMICAL PHYSICS, 1994, 101 (04) : 3301 - 3309
[7] MATSUDA A, 1990, MATER RES SOC SYMP P, V164, P3
[8] MATSUDA A, 1990, SURF SCI, V227, P50, DOI 10.1016/0039-6028(90)90390-T
[9] Effect of laser-induced dissociation of SiH3 radicals in SiH4 plasmas during atomic hydrogen measurements using laser-induced fluorescence by a two-photon excitation
Miyazaki, K
Mishiro, Y
Kajiwara, T
Uchino, K
Muraoka, K
Okada, T
Maeda, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (01): : 155 - 158
[10] STICKING AND RECOMBINATION OF THE SIH3 RADICAL ON HYDROGENATED AMORPHOUS-SILICON - THE CATALYTIC EFFECT OF DIBORANE
PERRIN, J
TAKEDA, Y
HIRANO, N
TAKEUCHI, Y
MATSUDA, A
[J]. SURFACE SCIENCE, 1989, 210 (1-2) : 114 - 128

← 1 2 →