NORMAL-INCIDENCE STRAINED-LAYER SUPERLATTICE GE0.5SI0.5/SI PHOTODIODES NEAR 1.3 MU-M

被引：58

作者：

HUANG, FY

ZHU, X

TANNER, MO

WANG, KL

机构：

[1] Device Research Laboratory, Electrical Engineering Department, University of California-Los Angeles, Los Angeles

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.115171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 mu m at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 mu m and 1% at 1.3 mu m, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated. (C) 1995 American Institute of Physics.

引用

页码：566 / 568

页数：3

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