LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS GROWN BY LEC TECHNIQUE

被引：22

作者：

KONDO, S

MIYAZAWA, S

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(82)90010-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：39 / 44

页数：6

共 8 条

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[5]

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[6] A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASB [J].

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