INTERFACIAL ENERGIES PROVIDING A DRIVING-FORCE FOR GE/SI HETEROEPITAXY

被引：46

作者：

HANSSON, PO ^{[1
]}

ALBRECHT, M ^{[1
]}

DORSCH, W ^{[1
]}

STRUNK, HP ^{[1
]}

BAUSER, E ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH,D-91058 ERLANGEN,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.73.444

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Epitaxy of Ge on Si(001) from undersaturated solutions demonstrates a novel principle: minimization of interfacial energy between solution and solid in a system provides the driving force for heteroepitaxy. Growth according to this principle leads to sharp heterointerfaces and Ge layers free of nucleation sites for dislocations. The relations of interfacial and strain energy vary on the system's pathway towards self-termination of growth and determine the layer morphology.

引用

页码：444 / 447

页数：4

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