CR-DOPED GAAS/ALGAAS SEMIINSULATING MULTIPLE QUANTUM-WELL PHOTOREFRACTIVE DEVICES

被引：62

作者：

PARTOVI, A ^{[1
]}

GLASS, AM ^{[1
]}

OLSON, DH ^{[1
]}

ZYDZIK, GJ ^{[1
]}

OBRYAN, HM ^{[1
]}

CHIU, TH ^{[1
]}

KNOX, WH ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.108934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semi-insulating multiple quantum well photorefractive devices using GaAs/Al0.29Ga0.71As with an electric field applied perpendicular to the layers are demonstrated. Semi-insulating behavior is obtained by doping with Cr(10(16)/cm3) during epitaxial growth of the material. Diffraction efficiencies as high as 3% with an applied voltage of 20 V and microsecond response times are obtained in a 2 mum thick device. These devices are of importance for implementation of fast and sensitive two-dimensional optical information processing systems at wavelengths compatible with current diode lasers without the spatial-bandwidth limitations of thick photorefractive materials.

引用

页码：464 / 466

页数：3

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