ANTIPHASE-DOMAIN-FREE INP ON (100) SI

被引：24
|
作者：
TANG, GP
LUBNOW, A
WEHMANN, HH
ZWINGE, G
SCHLACHETZKI, A
机构：
[1] Institut für Halbleitertechnik Technische Universität Braunschweig Postfach 3329
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8A期
关键词：
ANTIPHASE DOMAIN; INP ON SI; LP-MOVPE;
D O I：
10.1143/JJAP.31.L1126
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We show that antiphase-domain-free InP can be grown by means of low-pressure metalorganic-vapor-phase epitaxy (LP-MOVPE) on exactly (100)-oriented Si by appropriate choice of growth parameters. A simple detection scheme for antiphase domains (APD) in InP is presented. The most likely reason for the absence of APDs on the InP surface is their annihilation during the growth.
引用
收藏
页码：L1126 / L1128
页数：3
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