SI HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SINGLE-CRYSTALLINE BETA-SIC EMITTERS

被引：29

作者：

SUGII, T ^{[1
]}

ITO, T ^{[1
]}

FURUMURA, Y ^{[1
]}

DOKI, M ^{[1
]}

MIENO, F ^{[1
]}

MAEDA, M ^{[1
]}

机构：

[1] FUJITSU LTD,KAWASAKI 211,JAPAN

来源：

关键词：

D O I：

10.1149/1.2100240

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2545 / 2549

页数：5

共 11 条

[1] del Alamo J., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P290
[2] Furumura Y., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Part C, VJ69C, P705
[3] Ghannam M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P746
[4] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS
KROEMER, H
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537
[5] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES
MATSUNAMI, H
NISHINO, S
ONO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236
[6] OHUCHI N, 1979, IEDM, P522
[7] SAKAI T, 1985, IEDM, V18
[8] Sasaki K., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P294
[9] SASAKI K, 1986, 18TH INT C SOL STAT, P291
[10] Sugii T., 1986, 1986 Symposium on VLSI Technology. Digest of Technical Papers, P45