INFRARED DETECTION BY AVALANCHE DISCHARGE IN SILICON P-N JUNCTIONS

被引：18

作者：

KEIL, G

BERNT, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 04期

关键词：

D O I：

10.1016/0038-1101(66)90062-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：321 / +

页数：1

共 15 条

[1] MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA-FREE CARRIER MULTIPLICATION (SI P-N JUNCTIONS 3 GC/SEC E) [J].

ANDERSON, LK ;

MCMULLIN, PG ;

DASARO, LA ;

GOETZBERGER, A .

APPLIED PHYSICS LETTERS, 1965, 6 (04) :62-+

[2]

GRAUL J, PRIVATE COMMUNICATIO

[3] STUDIES ON OPTICAL COUPLING BETWEEN SILICON P-N JUNCTIONS [J].

HAITZ, RH .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :417-&

[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].

HAITZ, RH ;

GOETZBERGER, A ;

SCARLETT, RM ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&

[5] HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE [J].

JOHNSON, KM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) :55-+

[6] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[7] THEORY OF MICROPLASMA INSTABILITY IN SILICON [J].

MCINTYRE, RJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :983-&

[8] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

PHYSICAL REVIEW, 1954, 94 (04) :877-884

[9] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

MCKAY, KG ;

MCAFEE, KB .

PHYSICAL REVIEW, 1953, 91 (05) :1079-1084

[10] SILICON P-N-JUNCTION ALLOY DIODES [J].

PEARSON, GL ;

SAWYER, B .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1348-1351

← 1 2 →