STARK-BROADENING OF SPECTRAL-LINES OF HYDROGENIC IMPURITIES IN LIGHTLY DOPED COMPENSATED SEMICONDUCTORS AT LOW-TEMPERATURES

被引：0
作者：
KOGAN, SM
VANLIEN, N
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 01期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：26 / 32
页数：7
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