IRON-RELATED DONOR LEVEL IN N-TYPE SILICON

被引：13

作者：

TANAKA, S

KITAGAWA, H

机构：

[1] Department of Electronic Materials Engineering, Fukuoka Institute of Technology, Higashi-ku, Fukuoka, 811-02, Wajiro-Higashi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 6B期

关键词：

IRON; N-SILICON; DONOR LEVEL; ISOTHERMAL ANNEALING; POOLE-FRENKEL EFFECT;

D O I：

10.1143/JJAP.34.L721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Iron introduces a donor level at about E(c) - 0.4 eV in n-type silicon. In this work, the electrical properties of this donor state have been studied by deep-level transient spectroscopy (DLTS). It is found, by resolving the overlapping DLTS peaks obtained after room temperature annealing, that the donor decomposes into several other states. Isothermal annealing of samples containing different amounts of phosphorus show that phosphorus has no significant effect on the annealing decay constant of the donor, indicating that phosphorus atoms do not take part in the annealing decay of the donor. A Poole-Frenkel field emission effect is observed in the donor level as expected for donors in n-type silicon.

引用

页码：L721 / L723

页数：3

共 6 条

[1] A RAPIDLY CONVERGENT DESCENT METHOD FOR MINIMIZATION [J].

FLETCHER, R ;

POWELL, MJD .

COMPUTER JOURNAL, 1963, 6 (02) :163-&

[2] OXYGEN-RELATED DONOR STATES IN SILICON [J].

KIMERLING, LC ;

BENTON, JL .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :410-412

[3]

KITAGAWA H, 1992, J ELECTRON MATER, V21, P863

[4] IN-DIFFUSION AND ISOTHERMAL ANNEALING OF IRON-RELATED DEFECTS IN N-TYPE SILICON [J].

KITAGAWA, H ;

TANAKA, S ;

NI, B .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (11B) :L1645-L1647

[5] ELECTRON-PARAMAGNETIC RESONANCE OF AN FE-FE PAIR IN SILICON [J].

VANKOOTEN, JJ ;

SIEVERTS, EG ;

AMMERLAAN, CAJ .

SOLID STATE COMMUNICATIONS, 1987, 64 (12) :1489-1494

[6] THE SOLUTION OF IRON IN SILICON [J].

WEBER, E ;

RIOTTE, HG .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1484-1488

← 1 →