The Kapitza Resistance Between Copper and He-3

被引：68
作者：
Anderson, A. C. [1 ]
Johnson, W. L.
机构：
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 1972年 / 7卷 / 1-2期
关键词：
D O I：
10.1007/BF00629118
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Kapitza resistance R-K between copper and He-3 has been measured at low pressure in a guarded cell in the temperature range 0.05-0.5 K. An extreme sensitivity to surface damage was observed. For an annealed, electropolished surface R-K agreed within a factor of two with the acoustic mismatch theory below approximate to 0.1 K. It was also noted that R-K between copper and liquid He-3 was identical to RK between copper and an adsorbed He-3 film. The data are compared with several mechanisms proposed theoretically to account for R-K.
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页码：1 / 21
页数：21
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