MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS - CDXHG1-XTE

被引：60

作者：

FAURIE, JP

MILLION, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 03期

关键词：

D O I：

10.1016/0022-0248(81)90516-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：582 / 585

页数：4

共 7 条

[1] PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES [J].

BREBRICK, RF ;

STRAUSS, AJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) :989-&

[2]

FARRAR RA, 1977, J MATER SCI, V12

[3] VAPORIZATION OF HG1-XCDXTE CRYSTALS - CASE OF GROSS INCONGRUENCY [J].

FARROW, RFC ;

JONES, GR ;

WILLIAMS, GM ;

SULLIVAN, PW ;

BOYLE, WJO ;

WOTHERSPOON, JTM .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (10) :L117-&

[4]

FAURIE JP, 1981, J CRYSTAL GROWTH, V54, P578

[5] VACUUM DEPOSITION OF HG0.8CD0.2TE [J].

HOHNKE, DK ;

HOLLOWAY, H ;

LOGOTHET.EM ;

CRAWLEY, RC .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2487-&

[6] PHASE DIAGRAM OF HG1-XCDXTE [J].

SCHMIT, JL ;

SPEERSCHNEIDER, CJ .

INFRARED PHYSICS, 1968, 8 (03) :247-+

[7] HG-CD-TE PHASE-DIAGRAM DETERMINATION BY HIGH-PRESSURE REFLUX [J].

STEININGER, J .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) :299-320

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