CONVERGENCE OF FORCE CALCULATIONS FOR NONCRYSTALLINE SI

被引:26
作者
DRABOLD, DA
DOW, JD
FEDDERS, PA
CARLSSON, AE
SANKEY, OF
机构
[1] WASHINGTON UNIV, DEPT PHYS, ST LOUIS, MO 63130 USA
[2] ARIZONA STATE UNIV, DEPT PHYS, TEMPE, AZ 85287 USA
关键词
D O I
10.1103/PhysRevB.42.5345
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We compare the forces generated by various angle-dependent potentials and by ab initio band-structure calculations with a limited number of k points. In cells with 32 and 54 atoms we find substantial errors for all of the angle-dependent-force models, as well as for the band-structure forces with very few k points. © 1990 The American Physical Society.
引用
收藏
页码:5345 / 5348
页数:4
相关论文
共 22 条
[1]   SEMIEMPIRICAL MODIFIED EMBEDDED-ATOM POTENTIALS FOR SILICON AND GERMANIUM [J].
BASKES, MI ;
NELSON, JS ;
WRIGHT, AF .
PHYSICAL REVIEW B, 1989, 40 (09) :6085-6100
[3]   INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004
[4]   NEW CLASSICAL-MODELS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW B, 1987, 36 (12) :6434-6445
[5]   MOLECULAR-DYNAMICS SIMULATION OF CLUSTER AND ATOM DEPOSITION ON SILICON(111) [J].
BISWAS, R ;
GREST, GS ;
SOUKOULIS, CM .
PHYSICAL REVIEW B, 1988, 38 (12) :8154-8162
[6]   INTENSE SMALL WAVE-VECTOR SCATTERING FROM VOIDS IN AMORPHOUS-SILICON - A THEORETICAL SIMULATION [J].
BISWAS, R ;
KWON, I ;
BOUCHARD, AM ;
SOUKOULIS, CM ;
GREST, GS .
PHYSICAL REVIEW B, 1989, 39 (08) :5101-5106
[7]   PHASE-DIAGRAM OF SILICON BY MOLECULAR-DYNAMICS [J].
BROUGHTON, JQ ;
LI, XP .
PHYSICAL REVIEW B, 1987, 35 (17) :9120-9127
[8]   STRUCTURAL, DYNAMICAL, AND ELECTRONIC-PROPERTIES OF AMORPHOUS-SILICON - AN ABINITIO MOLECULAR-DYNAMICS STUDY [J].
CAR, R ;
PARRINELLO, M .
PHYSICAL REVIEW LETTERS, 1988, 60 (03) :204-207
[9]  
Carlsson A. E., 1990, SOLID STATE PHYS, V43, P1, DOI DOI 10.1016/S0081-1947(08)60323-9
[10]   GENERALIZED EMBEDDED-ATOM FORMAT FOR SEMICONDUCTORS [J].
CARLSSON, AE ;
FEDDERS, PA ;
MYLES, CW .
PHYSICAL REVIEW B, 1990, 41 (02) :1247-1250