CURRENT GAIN AT L-H JUNCTIONS IN GERMANIUM

被引:17
作者
ARTHUR, JB
GIBSON, AF
GUNN, JB
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1956年 / 69卷 / 07期
关键词
D O I
10.1088/0370-1301/69/7/302
中图分类号
Q [生物科学];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:705 / 711
页数:7
相关论文
共 9 条
[1]   CARRIER ACCUMULATION IN GERMANIUM [J].
ARTHUR, JB ;
GIBSON, AF ;
GUNN, JB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (07) :697-704
[2]   RESISTIVITY CHANGES IN SILICON SINGLE CRYSTALS INDUCED BY HEAT TREATMENT [J].
FULLER, CS ;
DITZENBERGER, JA ;
HANNAY, NB ;
BUEHLER, E .
ACTA METALLURGICA, 1955, 3 (01) :97-99
[3]   FORMING PROCEDURES FOR SILICON POINT-CONTACT TRANSISTORS [J].
GRANVILLE, JW ;
BARDSLEY, W ;
GIBSON, AF .
BRITISH JOURNAL OF APPLIED PHYSICS, 1955, 6 (06) :206-210
[4]   RESISTANCE OF GERMANIUM CONTACTS [J].
GUNN, JB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1952, 65 (395) :908-909
[5]   CARRIER CONCENTRATION DISTURBANCES IN SEMICONDUCTORS [J].
LOW, GGE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (05) :310-314
[6]  
SCROGGIE MG, 1952, WIRELESS WORLD, P14
[7]  
SHOCKLEY W, 1949, BELL SYSTEM TECHN J, V28, P364
[8]   CURRENT MULTIPLICATION IN THE TYPE-A TRANSISTOR [J].
SITTNER, WR .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (04) :448-454
[9]   TRANSISTOR FORMING EFFECTS IN N-TYPE GERMANIUM [J].
VALDES, LB .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (04) :445-448