HIGH-SPEED MONOLITHIC INP/INGAAS PIN-PHOTODIODE ARRAY WITH SMALL PITCH

被引：1

作者：

EMEIS, N

KUNKEL, W

HOFFMANN, L

EBBINGHAUS, G

机构：

[1] Siemens Research Laboratories, München

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 17期

关键词：

PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic arrays of four InP/InGaAs pin photodiodes for wavelength division multiplexing applications have been fabricated on semi-insulating InP substrate. The diodes have a diameter of 30-mu-m on a 60-mu-m pitch. Deep trenches are used to isolate the individual diodes from each other. A crosstalk below -30 dB is achieved for frequencies up to about 3.3 GHz. Pulse measurements at the individual diodes show a falltime of 33 ps corresponding to a 3 dB bandwidth in excess of 10 GHz.

引用

页码：1550 / 1551

页数：2