ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO

被引：272
作者：
CAPASSO, F
TSANG, WT
HUTCHINSON, AL
WILLIAMS, GF
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 01期
关键词：
D O I：
10.1063/1.92910
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：38 / 40
页数：3
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共 21 条
[1]   IONIZATION COEFFICIENT MEASUREMENT IN GAAS BY USING MULTIPLICATION NOISE CHARACTERISTICS [J].
ANDO, H ;
KANBE, H .
SOLID-STATE ELECTRONICS, 1981, 24 (07) :629-634
[2]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[3]  
BULMAN GE, 1981, 39TH P DEV RES C SAN
[4]   OBSERVATION OF ELECTRONIC BAND-STRUCTURE EFFECTS ON IMPACT IONIZATION BY TEMPERATURE TUNING [J].
CAPASSO, F ;
NAHORY, RE ;
POLLACK, MA ;
PEARSALL, TP .
PHYSICAL REVIEW LETTERS, 1977, 39 (11) :723-726
[5]  
CAPASSO F, UNPUB
[6]   IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].
CHIN, R ;
HOLONYAK, N ;
STILLMAN, GE ;
TANG, JY ;
HESS, K .
ELECTRONICS LETTERS, 1980, 16 (12) :467-469
[7]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[8]   GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J].
HILDEBRAND, O ;
KUEBART, W ;
BENZ, KW ;
PILKUHN, MH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :284-288
[9]   IMPACT IONIZATION RATIO IN IN0.73GA0.27AS0.57P0.43 [J].
ITO, M ;
KANEDA, T ;
NAKAJIMA, K ;
TOYOMA, Y ;
YAMAOKA, T ;
KOTANI, T .
ELECTRONICS LETTERS, 1978, 14 (14) :418-419
[10]   INTERBAND SCATTERING EFFECTS ON SECONDARY IONIZATION COEFFICIENTS IN GAAS [J].
LAW, HD ;
LEE, CA .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :331-340
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