MESOTAXY BY NICKEL DIFFUSION INTO A BURIED AMORPHOUS-SILICON LAYER

被引:10
作者
EROKHIN, YN
GROTZSCHEL, R
OKTYABRSKY, SR
ROORDA, S
SINKE, W
VYATKIN, AF
机构
[1] CENT INST KERNFORSCH,DRESDEN,GERMANY
[2] PN LEBEDEV PHYS INST,MOSCOW 117924,USSR
[3] FUNDAMENTAL ONDERZOEK MAT,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 12卷 / 1-2期
关键词
D O I
10.1016/0921-5107(92)90267-D
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel method to produce a buried epitaxial silicide in silicon is described. Metal atoms are deposited onto the surface of a piece of crystalline silicon (c-Si) which contains a buried amorphous silicon (a-Si) layer in the "as-implanted" state. Prolonged heating at 350-degrees-C leads to diffusion of metal atoms through the thin c-Si top layer followed by a chemical reaction with the buried a-Si, forming buried epitaxial silicide islands. These islands then move through the a-Si layer, leaving behind epitaxially crystallized silicon.
引用
收藏
页码:103 / 106
页数:4
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