ABNORMAL REDISTRIBUTION OF ZN IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES

被引:45
|
作者
KURISHIMA, K
KOBAYASHI, T
GOSELE, U
机构
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
关键词
D O I
10.1063/1.106945
中图分类号
O59 [应用物理学];
学科分类号
摘要
High n+ doping (> 10(19) cm-3 of Si) in the subcollector of InP/InGaAs heterojunction bipolar transistor structures is observed to induce an anomalously high Zn diffusivity and an associated broadening of the base layers. It is proposed that due to Fermi level surface pinning and a long time constant for the recovery of point defect equilibrium the subcollector acts as a continuously operating source of group III interstitials which in turn diffuse into the subsequently grown base region and enhance Zn diffusion via the kick-out mechanism. In this sense, highly n+ doped grown-in subcollector layers may be considered as having the effect of a "time bomb" in terms of generating undesirable excess point defects during subsequent further crystal growth and device processing.
引用
收藏
页码:2496 / 2498
页数:3
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