AMORPHOUS HYDROGENATED CARBON-FILMS ON SEMICONDUCTORS .1. ELECTRONIC-PROPERTIES OF THE INTERFACE

被引：30

作者：

UGOLINI, D ^{[1
]}

EITLE, J ^{[1
]}

OELHAFEN, P ^{[1
]}

WITTMER, M ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 06期

关键词：

D O I：

10.1007/BF00617856

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：549 / 558

页数：10

共 27 条

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[23] WEISSMANTEL C, 1987, AMORPHOUS HYDROGENAT, P49
[24] THERMAL GAS EFFUSION FROM HYDROGENATED AMORPHOUS-CARBON FILMS
WILD, C
KOIDL, P
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1506 - 1508
[25] WILD C, 1987, AMORPHOUS HYDROGENAT, P137
[26] AMORPHOUS HYDROGENATED CARBON-FILMS ON SEMICONDUCTORS .2. MICROSTRUCTURAL PROPERTIES OF THE INTERFACE
WITTMER, M
UGOLINI, D
EITLE, J
OELHAFEN, P
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (06): : 559 - 566
[27] ATOMIC SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AND ASYMMETRY PARAMETERS - 1 LESS-THAN-OR-EQUAL-TO Z LESS-THAN-OR-EQUAL-TO 103
YEH, JJ
LINDAU, I
[J]. ATOMIC DATA AND NUCLEAR DATA TABLES, 1985, 32 (01) : 1 - 155