INCORPORATION OF AU INTO VAPOR-GROWN GE

被引：7

作者：

BAKER, WE

COMPTON, DMJ

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1960年 / 4卷 / 03期

关键词：

D O I：

10.1147/rd.43.0296

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：296 / 298

页数：3

共 10 条

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[5] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J].

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[6] ELECTRICAL PROPERTIES OF VAPOR-GROWN GE JUNCTIONS [J].

OROURKE, MJ ;

MARINACE, JC ;

ANDERSON, RL ;

WHITE, WH .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :256-263

[7]

PLUMB RC, 1955, NUCLEONICS, V13, P42

[8] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

[9] DEEP LEVEL IMPURITIES IN GERMANIUM [J].

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[10]

Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

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