MULTIPHASE SURFACE MORPHOLOGIES OF DOPED HOMOEPITAXIAL DIAMOND FILMS

The increasing availability of doped homoepitaxial diamond films of varying thickness and carrier concentration suitable for nanoelectronic applications necessitates an understanding of the growth process and resulting film surface morphology. Films grown on (100) and (110) polished natural diamond substrates were previously investigated using various nuclear and electron spectroscopic techniques. These epitaxial surfaces are now subjected to examination using scanning tunnelling microscopy (STM) and atomic force microscopy (AFM) in which atomically resolved growth features were observed on both films with local variations within a given film. Fourier analysis over areas of constant k clearly distinguish the effects of long and short range order in these surfaces and from which good LEED diffraction patterns were obtained.