CHARGE-TRANSFER CR3+(3D3)-]CR2+(3D4) IN CHROMIUM-DOPED GAAS

被引:35
作者
MARTINEZ, G [1 ]
HENNEL, AM [1 ]
SZUSZKIEWICZ, W [1 ]
BALKANSKI, M [1 ]
CLERJAUD, B [1 ]
机构
[1] UNIV PARIS 06, CNRS, EQUIPE RECH, LUMINESCENCE LAB 2, F-75230 PARIS 05, FRANCE
来源
PHYSICAL REVIEW B | 1981年 / 23卷 / 08期
关键词
D O I
10.1103/PhysRevB.23.3920
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3920 / 3932
页数:13
相关论文
共 37 条
[1]  
ALLEN GA, 1968, BRIT J APPL PHYS, V2, P593
[2]   PHOTO-IONIZATION OF DEEP IMPURITIES IN SEMICONDUCTORS [J].
ALLEN, JW .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (06) :1077-&
[3]   APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J].
BEBB, HB .
PHYSICAL REVIEW, 1969, 185 (03) :1116-&
[4]   OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE [J].
BOIS, D ;
PINARD, P .
PHYSICAL REVIEW B, 1974, 9 (10) :4171-4177
[5]  
CLERJAUD B, 1971, J PHYS E SCI INSTRUM, V4, P619
[6]  
DAHAN N, UNPUBLISHED
[7]  
HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161
[8]  
HAM FS, 1965, PHYS REV, V138, P1727
[9]  
HENNEL AM, 1980, PHYS REV B, V23, P3933
[10]   DEEP CENTER PHOTO-LUMINESCENCE SPECTRA OF GAAS(CR,SI) [J].
INSTONE, T ;
EAVES, L .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (18) :L771-L775