FILAMENT FORMATION IN A TAPERED GAALAS OPTICAL AMPLIFIER

被引：48
作者：
GOLDBERG, L [1 ]
SURETTE, MR [1 ]
MEHUYS, D [1 ]
机构：
[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期
关键词：
D O I：
10.1063/1.109399
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Filament formation in a tapered GaAlAs amplifier with an output width of 320 mum is characterized by injecting an input beam with a superimposed sinusoidal intensity modulation (30 mum period, 30% peak-to-peak modulation). Strong seeded filamentation of the output near field, and large far field side lobes are observed for powers above approximately 1 W. Time dependent decay of the main far field lobe, characterized by a time constant of several microseconds, is used to separate the effects of localized carrier density variations from the thermal contribution to intensity and phase distortion of the output beam.
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收藏
页码：2304 / 2306
页数：3
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