FILAMENT FORMATION IN A TAPERED GAALAS OPTICAL AMPLIFIER

被引：48

作者：

GOLDBERG, L ^{[1
]}

SURETTE, MR ^{[1
]}

MEHUYS, D ^{[1
]}

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Filament formation in a tapered GaAlAs amplifier with an output width of 320 mum is characterized by injecting an input beam with a superimposed sinusoidal intensity modulation (30 mum period, 30% peak-to-peak modulation). Strong seeded filamentation of the output near field, and large far field side lobes are observed for powers above approximately 1 W. Time dependent decay of the main far field lobe, characterized by a time constant of several microseconds, is used to separate the effects of localized carrier density variations from the thermal contribution to intensity and phase distortion of the output beam.

引用

页码：2304 / 2306

页数：3

共 14 条

[1] PROPAGATION OF A HIGH-INTENSITY LASER PULSE WITH SMALL-SCALE INTENSITY MODULATION [J].