TRANSMISSION ELECTRON-MICROSCOPY OF INP-BASED COMPOUND SEMICONDUCTOR-MATERIALS AND DEVICES

[11] DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3441 - 3447

[12] SUBSTRATE ROTATION-INDUCED COMPOSITION MODULATION IN EPITAXIAL ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (10) : 3838 - 3844

[13] PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2795 - 2798

[14] LATTICE-MISMATCH-GENERATED DISLOCATION-STRUCTURES AND THEIR CONFINEMENT USING SUPERLATTICES IN HETEROEPITAXIAL GAAS/INP AND INP/GAAS GROWN BY CHEMICAL BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 520 - 530

[15] CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378

[16] 1/2(100)(100) DISLOCATION LOOPS IN A ZINC BLENDE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1990, 56 (05) : 434 - 436

[17] DEFECT MECHANISMS IN DEGRADATION OF 1.3-MU-M WAVELENGTH CHANNELED-SUBSTRATE BURIED HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 611 - 623

[18] SURFACE-LAYER SPINODAL DECOMPOSITION IN IN1-XGAXASYP1-Y AND IN1-XGAXAS GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4610 - 4615

[19] CHU SNG, 1990, J APPL PHYS, V67, P1

[20] COHEN HA, 1984, PHYS REV LETT, V62, P219

[11] DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3441 - 3447

[12] SUBSTRATE ROTATION-INDUCED COMPOSITION MODULATION IN EPITAXIAL ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (10) : 3838 - 3844

[13] PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2795 - 2798

[14] LATTICE-MISMATCH-GENERATED DISLOCATION-STRUCTURES AND THEIR CONFINEMENT USING SUPERLATTICES IN HETEROEPITAXIAL GAAS/INP AND INP/GAAS GROWN BY CHEMICAL BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 520 - 530

[15] CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378

[16] 1/2(100)(100) DISLOCATION LOOPS IN A ZINC BLENDE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1990, 56 (05) : 434 - 436

[17] DEFECT MECHANISMS IN DEGRADATION OF 1.3-MU-M WAVELENGTH CHANNELED-SUBSTRATE BURIED HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 611 - 623

[18] SURFACE-LAYER SPINODAL DECOMPOSITION IN IN1-XGAXASYP1-Y AND IN1-XGAXAS GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4610 - 4615

[19] CHU SNG, 1990, J APPL PHYS, V67, P1

[20] COHEN HA, 1984, PHYS REV LETT, V62, P219