A TECHNIQUE TO MEASURE THE DYNAMIC-RESPONSE OF A-SI-H THIN-FILM TRANSISTOR-CIRCUITS

被引:1
作者
BASHIR, R
NEUDECK, GW
机构
[1] School of Electrical Engineering Purdue University W., Lafayette
关键词
D O I
10.1016/0038-1101(90)90082-P
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:973 / 974
页数:2
相关论文
共 4 条
[1]   MATERIALS LIMITATIONS OF AMORPHOUS-SI-H TRANSISTORS [J].
AST, DG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (05) :532-539
[2]  
FIRESTER AH, 1988, SOLID STATE TECHNOL, V31, P63
[3]   THIN-FILM TRANSISTORS WITH SPUTTERED CDSE AS SEMICONDUCTOR [J].
MOERSCH, G ;
RAVA, P ;
SCHWARZ, F ;
PACCAGNELLA, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :449-451
[4]   MODELING OF AMBIPOLAR A-SI-H THIN-FILM TRANSISTORS [J].
NEUDECK, GW ;
BARE, HF ;
CHUNG, KY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :344-350