TEM INSITU INVESTIGATIONS OF THE CRYSTALLIZATION OF A-SI THIN-FILMS

被引：0

作者：

REICHE, M

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The crystallization of a-Si layers deposited on SiO2- or Si3N4 films has been investigated by in situ annealing in an HVEM. The different formation mechanisms of crystallites by a surface-induced crystallization are presented. Interfacial stresses were deduced to be the main reason for nucleation.

引用

页码：201 / 204

页数：4

共 7 条

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[3] HIRTH JP, 1963, PROGR MATERIALS SCI, V11, P15
[4] MECHANICAL STRESSES IN LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS
KOLESHKO, VM
BELITSKY, VF
KIRYUSHIN, IV
[J]. THIN SOLID FILMS, 1988, 165 (01) : 181 - 191
[5] TEM INSITU INVESTIGATIONS OF THE CRYSTALLIZATION BEHAVIOR OF AMORPHOUS-SILICON THIN-FILMS
REICHE, M
HOPFE, S
[J]. ULTRAMICROSCOPY, 1990, 33 (01) : 41 - 50
[6] REICHE M, 1990, 35 P INT K ILM, V4, P29
[7] CRYSTALLIZATION IN AMORPHOUS-SILICON
ZELLAMA, K
GERMAIN, P
SQUELARD, S
BOURGOIN, JC
THOMAS, PA
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6995 - 7000

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