DELAY TIME ANALYSIS FOR 0.4-MUM TO 5-MUM-GATE INALAS-INGAAS HEMTS

被引：46
作者：
ENOKI, T
ARAI, K
ISHII, Y
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-10, 3-1, Morinosato Wakamiya
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期
关键词：
D O I：
10.1109/55.63013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InAlAs-InGaAs HEMT’s with 0.4- to 5-μm gate lengths have been fabricated and a maximum fT of 84 GHz has been obtained by a 0.4-pm-gate-length device. Simple analysis of their delay times is carried out. The gradual channel approximation with the field-dependent mobility model with Ec of 5 kV/cm holds for long-channel devices (Lg > 2 μm). The saturated velocity model with the saturated velocity of 2.7 × 107 cm/s holds for short-channel devices (Lg < 1 μm). © 1990 IEEE
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页码：502 / 504
页数：3
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