POSITRON TRAPPING IN VACANCIES IN INDIUM DOPED CDTE CRYSTALS

被引：27
作者：
GELYSYKES, C
CORBEL, C
TRIBOULET, R
机构：
[1] UNIV PARIS 06,LAB SRI,F-75231 PARIS 05,FRANCE
[2] CNRS,MEUDON BELLEVUE,PHYS SOLIDES LAB,F-92195 MEUDON,FRANCE
来源：
SOLID STATE COMMUNICATIONS | 1991年 / 80卷 / 01期
关键词：
D O I：
10.1016/0038-1098(91)90602-R
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 +/- 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (VCdIn)-complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.
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页码：79 / 83
页数：5
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