HIGH-SPEED 1.3-MU-M INGAAS GAAS SUPERLATTICE ON SI PHOTODETECTOR

被引：10

作者：

ZIRNGIBL, M

BISCHOFF, JC

ILEGEMS, M

HIRTZ, JP

BARTENLIAN, B

BEAUD, P

HODEL, W

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND

[2] THOMSON CSF,F-91401 ORSAY,FRANCE

[3] UNIV BERN,INST APPL PHYS,CH-3012 BERN,SWITZERLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Integrated optics; Photodetectors;

D O I：

10.1049/el:19900666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High speed metal-semiconductor-metal photodetectors sensitive at 1-3 txm have been realised on Si substrates. The active layer consists of a strained InGaAs/GaAs superlattice grown by molecular beam epitaxy on GaAs-on-Si. The device exhibits a very fast response at 1-3/mi (FWHM <:35 ps), a reasonable low dark current (2 fiA and 8/zA at 10 and 20 V bias, respectively) and a wavelength dependent internal quantum efficiency of 15-50% at 20 V bias. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：1027 / 1029

页数：3

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共 9 条

[1] 1.3-MU-M SUBPICOSECOND PULSES FROM A DYE-LASER PUMPED BY COMPRESSED ND-YAG-LASER PULSES [J].

BEAUD, P ;

ZYSSET, B ;

SCHWARZENBACH, AP ;

WEBER, HP .

OPTICS LETTERS, 1986, 11 (01) :24-26

[2] 12 GHZ HIGH-POWER GAAS/SI MESFETS [J].

CHARASSE, MN ;

BARTENLIAN, B ;

GERARD, B ;

HIRTZ, JP ;

LAVIRON, M ;

DEPARSCAU, AM ;

DEREVONKO, M ;

DELAGEBEAUDEUF, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1896-L1898

[3] COMBINED EFFECT OF STRAINED-LAYER SUPERLATTICE AND ANNEALING IN DEFECTS REDUCTION IN GAAS GROWN ON SI SUBSTRATES [J].

ELMASRY, NA ;

TARN, JCL ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1989, 55 (14) :1442-1444

[4] ELECTRICAL AND OPTICAL STUDIES OF DISLOCATION FILTERING IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

GOURLEY, PL ;

DAWSON, LR ;

SCHIRBER, JE .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1098-1100

[5] III-V-COMPOUND DEVICES ON SILICON - SITUATION AND PERSPECTIVES [J].

HIRTZ, JP ;

CHARASSE, MN .

JOURNAL DE PHYSIQUE, 1988, 49 (C-4) :481-486

[6] GAINAS PIN PHOTODIODES GROWN ON SILICON SUBSTRATES FOR 1.55 MU-M DETECTION [J].

HODSON, PD ;

BRADLEY, RR ;

RIFFAT, JR ;

JOYCE, TB ;

WALLIS, RH .

ELECTRONICS LETTERS, 1987, 23 (20) :1094-1095

[7] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[8] A HIGH QUANTUM EFFICIENCY GAINAS-INP PHOTODETECTOR-ON-SILICON SUBSTRATE [J].

RAZEGHI, M ;

OMNES, F ;

BLONDEAU, R ;

MAUREL, P ;

DEFOUR, M ;

ACHER, O ;

VASSILAKIS, E ;

MESQUIDA, G ;

FAN, JCC ;

SALERNO, JP .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (10) :4066-4068

[9] A SUPERLATTICE GAAS/INGAAS-ON-GAAS PHOTODETECTOR FOR 1.3-MU-M APPLICATIONS [J].

ZIRNGIBL, M ;

BISCHOFF, JC ;

THERON, D ;

ILEGEMS, M .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (07) :336-338