HIGH-SPEED 1.3-MU-M INGAAS GAAS SUPERLATTICE ON SI PHOTODETECTOR

被引：10
作者：
ZIRNGIBL, M
BISCHOFF, JC
ILEGEMS, M
HIRTZ, JP
BARTENLIAN, B
BEAUD, P
HODEL, W
机构：
[1] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND
[2] THOMSON CSF,F-91401 ORSAY,FRANCE
[3] UNIV BERN,INST APPL PHYS,CH-3012 BERN,SWITZERLAND
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 14期
关键词：
Integrated optics; Photodetectors;
D O I：
10.1049/el:19900666
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High speed metal-semiconductor-metal photodetectors sensitive at 1-3 txm have been realised on Si substrates. The active layer consists of a strained InGaAs/GaAs superlattice grown by molecular beam epitaxy on GaAs-on-Si. The device exhibits a very fast response at 1-3/mi (FWHM <:35 ps), a reasonable low dark current (2 fiA and 8/zA at 10 and 20 V bias, respectively) and a wavelength dependent internal quantum efficiency of 15-50% at 20 V bias. © 1990, The Institution of Electrical Engineers. All rights reserved.
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收藏
页码：1027 / 1029
页数：3
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