VOLTAGE OSCILLATIONS IN SWITCHING VO2 NEEDLES

被引：23

作者：

FISHER, B

机构：

[1] Department of Physics, Technion-Israel Institute of Technology, Haifa

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.324401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Voltage oscillations observed in switching VO2 needles are associated with traveling semiconductor domains driven by the Peltier effect at their boundaries. The model is supported by the dependence on current of the two time constants characterizing the rectangular synchronous oscillations.

引用

页码：5339 / 5341

页数：3

共 3 条

[1] MOVING BOUNDARIES AND TRAVELING DOMAINS DURING SWITCHING OF VO2 SINGLE-CRYSTALS [J].