ELECTRICAL CHARACTERIZATION OF A SUPERLATTICE

被引：8

作者：

BOURGOIN, JC

MAUGER, A

STIEVENARD, D

DEVEAUD, B

REGRENY, A

机构：

[1] INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE

[2] CTR NATL TELECOMMUN,F-22301 LANNION,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 11期

关键词：

D O I：

10.1016/0038-1098(87)90042-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：757 / 759

页数：3

共 12 条

[1]

Bastard G., 1981, PHYS REV B, V24

[2] HYDROGENIC-IMPURITY GROUND-STATE IN GAAS-GA1-XALXAS MULTIPLE QUANTUM-WELL STRUCTURES [J].

CHAUDHURI, S .

PHYSICAL REVIEW B, 1983, 28 (08) :4480-4488

[3] OBSERVATION OF ONE MONOLAYER SIZE FLUCTUATIONS IN A GAAS/GAALAS SUPERLATTICE [J].

DEVEAUD, B ;

EMERY, JY ;

CHOMETTE, A ;

LAMBERT, B ;

BAUDET, M .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1078-1080

[4] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].

ESAKI, L ;

CHANG, LL .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498

[5] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

KIMERLING, LC .

PHYSICAL REVIEW B, 1977, 15 (10) :4874-4882

[6] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS [J].

LANGER, JM ;

HEINRICH, H .

PHYSICAL REVIEW LETTERS, 1985, 55 (13) :1414-1417

[7] DEFECT IDENTIFICATION IN ELECTRON-IRRADIATED GAAS [J].

LOUALICHE, S ;

GUILLOT, G ;

NOUAILHAT, A ;

BOURGOIN, J .

PHYSICAL REVIEW B, 1982, 26 (12) :7090-7092

[8] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

PONS, D ;

BOURGOIN, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :3839-3871

[9] DEFECTS IN SUPERLATTICES [J].

STIEVENARD, D ;

VUILLAUME, D ;

BOURGOIN, JC ;

DEVEAUD, B ;

REGRENY, A .

EUROPHYSICS LETTERS, 1986, 2 (04) :331-335

[10]

STIEVENARD D, 1986, 18TH INT C PHYS SEM

← 1 2 →