ORIGIN OF 1/F NOISE

被引:18
作者
PALENSKIS, V
SHOBLITSKAS, Z
机构
关键词
D O I
10.1016/0038-1098(82)90987-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:761 / 763
页数:3
相关论文
共 9 条
[1]   MODEL OF 1-F NOISE IN ION-IMPLANTED RESISTORS AS A FUNCTION OF THE RESISTANCE, DETERMINED BY A REVERSE BIAS VOLTAGE [J].
BECK, HGE .
SOLID-STATE ELECTRONICS, 1979, 22 (05) :475-478
[2]   LATTICE SCATTERING CAUSES 1-F NOISE [J].
HOOGE, FN ;
VANDAMME, LKJ .
PHYSICS LETTERS A, 1978, 66 (04) :315-316
[3]   SCATTERING MECHANISMS AND 1-F NOISE IN SEMICONDUCTORS [J].
KLEINPENNING, TGM .
PHYSICA B & C, 1981, 103 (2-3) :345-347
[4]   1-F NOISE OF HOT CARRIERS IN N-TYPE SILICON [J].
KLEINPENNING, TGM .
PHYSICA B & C, 1981, 103 (2-3) :340-344
[5]   GENERALIZED DIFFUSION-COEFFICIENT IN ONE-DIMENSIONAL RANDOM-WALKS WITH STATIC DISORDER [J].
MACHTA, J .
PHYSICAL REVIEW B, 1981, 24 (09) :5260-5269
[6]  
PALENSKIS VP, 1976, RADIOTEKH ELEKTRON+, V21, P2433
[7]  
SZE CM, PHYSICS SEMICONDUCTO
[8]   CONCENTRATION, MOBILITY AND 1-F NOISE OF ELECTRONS AND HOLES IN THIN BISMUTH-FILMS [J].
VANDAMME, LKJ ;
KEDZIA, J .
THIN SOLID FILMS, 1980, 65 (03) :283-292
[9]   FLICKER (1-F) NOISE - EQUILIBRIUM TEMPERATURE AND RESISTANCE FLUCTUATIONS [J].
VOSS, RF ;
CLARKE, J .
PHYSICAL REVIEW B, 1976, 13 (02) :556-573