CHARACTERIZATION OF STAIN-ETCHED POROUS SILICON

被引：24
作者：
LIU, S
PALSULE, C
YI, S
GANGOPADHYAY, S
机构：
[1] Department of Physics, Texas Tech. University, Lubbock
来源：
PHYSICAL REVIEW B | 1994年 / 49卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.49.10318
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have performed infrared absorption, continuous-wave photoluminescence, and nanosecond photoluminescence decay measurements to characterize stain-etched porous silicon. Stain-etched porous silicon samples were prepared by etching boron-doped crystalline silicon wafers in a solution of HF:HNO3:H2O with ratios of 1:5:10 by volume. The dependence of continuous-wave photoluminescence intensity upon temperature and excitation energy has been studied. We have also investigated the dependence of nanosecond photoluminescence decay upon temperature, excitation energy, and emission energy. Our results suggest that the photoluminescence in stain-etched porous silicon might be due to the presence of siloxene-type bonding configuration in an amorphous alloy of silicon, oxygen, and hydrogen.
引用
收藏
页码：10318 / 10325
页数：8
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