The Fabrication of Tin Oxide Films by Atomic Layer Deposition using Tetrakis(Ethylmethylamino) Tin Precursor

被引：32

作者：

Choi, Woon-Seop ^{[1
]}

机构：

[1] Hoseo Univ, Sch Display Engn, Asan 336795, South Korea

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2009年 / 10卷 / 06期

关键词：

Tin oxide; ALD; Precursor;

D O I：

10.4313/TEEM.2009.10.6.200

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin oxide thin films were prepared by atomic layer deposition using a tetrakis(ethylmethylamino) tin precursor without any seed layer. The average growth rate of tin oxide film is about 1.2 A/cycle from 50 degrees C to 150 degrees C. The rate decreases rapidly at a substrate temperature of 200 degrees C. ALD-grown tin oxide thin film was characterized with the use of XRD, AFM and XPS. Due to a thermal annealing effect, the surface roughness and the tin amount in the film composition are slightly increased.

引用

页码：200 / 202

页数：3

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